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1 / 1 2 n ??? n - channel mosfet j cs 12n60 c order codes ? marking ? package halogen free ? packaging device weight jcs 12n60 c c - o - c - n - b jcs 12n60 c to - 220c no tube 2.15 g(typ) jcs 12n60 f c - o - f - n - b jcs 12n60 f to - 220m f - k2 no tube 2.20 g(typ) jcs 12n60 s c - o - s - n - b jcs 12n60 s to - 2 63 no tube 1.37 g(typ) jcs 12n60 bc - o - b - n - b jcs 12n60 b to - 2 62 no tube 1. 71 g(typ) jcs 12n60 c c - r - c - n - b jcs 12n60 c to - 220c yes tube 2.15 g(typ) jcs 12n60 f c - r - f - n - b jcs 12n60 f to - 220mf - k2 yes tube 2. 2 0 g(typ) jcs 12n60 s c - r - s - n - b jcs 12n60 s to - 2 63 yes tube 1.37 g(typ) jcs 12n60 bc - r - b - n - b jcs 12n60 b to - 2 62 yes tube 1. 71 g(typ) ? package ? main characteristics i d 12 .0 a v dss 6 00 v rdson - max @vgs=10v 0. 6 2 ? qg - typ 3 0 nc ? ? ??? ? ? led ? applications ? high efficiency switch mode power supplies ? electronic lamp ballasts based on half bridge ? led power supplies ? ? ? ? c rss ( ? 2 0 pf) ? ?? ? ??? ? ? dv/dt ? rohs ? features ? l ow gate charge ? low c rss (typical 2 0 pf ) ? fast switching ? 100% avalanche tested ? imp roved dv/dt capa bility ? rohs product ? order message to - 262 r
jcs 12n60 c 201 703a 2 / 1 2 ?? absolute ratings (tc=25 ) * ?? *drain current limited by maximum jun ction temperature ? parameter symbol ? value unit jcs 12n60bc / c c /sc jcs 12n60 f c ???? dss 6 00 6 00 v ? d t=25 t=100 ? ? 1 drain current C dm 4 8 4 8 * a ??? gss 30 v ? ? 2 single pulsed ava lanche energy as 880 mj ? ? 1 avalanche current ar 1 2 a ?? ? 1 ar 17.8 mj ??? ? 3 peak diode recovery dv/dt ? d t c =25 - derate ab ove 25 ??? j stg - 55 ?? l 300 r
jcs 12n60 c 201 703a 3 / 1 2 ? parameter symbol tests conditions min typ max units ? off C characteristics ??? drain - source voltage bv dss i d =250 a, v gs =0v 6 00 - - v ?? breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0. 5 - v/ ???? zero gate voltage drain current i dss v ds = 6 00v,v gs =0v, t c =25 - - 1 a v ds = 48 0v, t c =125 - - 10 a ?? gate - body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate - body lea kage current, reverse i gssr v ds =0v, v gs = - 30v - - - 100 na ?? on - characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 2 .0 - 4 .0 v ?? static drain - source on - resistance r ds(on) v gs =10v , i d = 6 a - 0. 45 0. 62 ? forward tran sconductance g fs v ds = 40v, i d = 6 a note 4 - 13 - s ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0mh z - 1 50 0 2 10 0 pf output capacitance c oss - 1 60 - pf reverse transfer capacitance c rss - 2 0 - pf r
jcs 12n60 c 201 703a 4 / 1 2 e lectrical c haracteristics switching characteristics ?? turn - on delay time t d (on) v dd = 30 0v,i d = 12 a,r g =25? note 4 5 - 65 - ns ? turn - on rise time t r - 1 03 - ns ?? turn - off delay time t d (off) - 210 - ns ?? turn - off fall time t f - 96 - ns ? total gate charge q g v ds = 48 0v , i d = 12 a v gs =10v note 4 5 - 30 52 nc ?? gate - source charge q gs - 7.9 - nc ?? gate - drain charge q gd - 18 - nc ????? drain - source diode characteristics and maximum ratings ma ximum continuous drain - source diode forward current i s - - 1 2 a maximum pulsed drain - source diode forward current i sm - - 4 8 a ? drain - source diode forward voltage v sd v gs =0v, i s = 12 a - - 1.39 v ?? reverse recovery time t rr v gs =0v, i s = 12 a di f /dt=100a/ s (note 4) - 406 - ns ? reverse recovery charge q rr - 4. 85 - c ? parameter symbol max unit jcs 12n60 b c / c c/sc jcs 12n60 f c ??? thermal resistance, junction to case r th(j - c) 0. 5 2. 45 /w ? thermal resistance, junction to ambient r th(j - a) 62.5 62.5 /w ? ? 1 ? 2 l = 1 1.2 mh, i as = 12 a, v dd = 50 v, r g =25 ?, ? t j =25 3 i sd 12 a,di/dt 3 00a/ s,vddbv dss , ? t j =25 4 ? 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l= 1 1.2 mh, i as = 12 a, v dd =50v, r g =25 ?,starting t j =25 3 i sd 12 a,di/dt 3 00a/ s,vddbv dss , starting t j =25 4 pulse test p ulse width 300s,duty cycle2 5 essentially independent of operating temperature r
jcs 12n60 c 201 703a 5 / 1 2 electrical characteristics (curves) on - regio n characteristics transfer characteristics on - resistance variation vs. drain current and gate voltage body diode forward voltage variation vs. source current and temperature capacitance characteristics gate charge characteristics r
jcs 12n60 c 201 703a 6 / 1 2 electrical characteristics (curves) breakdown voltage variation vs. temperature on - resistance variation v s. temperature maximum safe operating area for jcs 12n60 f c maximum drain current vs. case temperature maximum safe ope rating area for jcs 12n60 b c /s c / c c r -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 notes: 1. v g s =0v 2. i d =250a bv ds (normalized) t j [ ]
jcs 12n60 c 201 703a 7 / 1 2 electrical characteristics (curves) transient thermal response curve for jcs 12n60 b c / c c/sc transient thermal response curve for jcs 12n60 f c r
jcs 12n60 c 201 703a 8 / 1 2 ? package mechanical data to - 263 u nit mm r
jcs 12n60 c 201 703a 9 / 1 2 ? package mechanical data to - 2 20 c u nit mm r
jcs 12n60 c 201 703a 10 / 1 2 ? package mechanical data to - 220mf - k2 u nit mm r
jcs 12n60 c 201 703a 11 / 1 2 ? package mechanical data to - 262 u nit mm r
jcs 12n60 c 201 703a 12 / 1 2 ? 1. ????????? ?????? ???? 2. ????? ?? 3. ????? ?????? 4 . ??? note 1. jilin sino - microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefull y on the trademark when buying our product, if there is any question, please dont be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino - microelectronics co . , ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86 - 432 - 6 4678411 86 - 432 - 6 4665812 ? www.hwdz.com.cn ? ??? 99 ?? 132013 86 - 432 - 6 4675588 6 4675688 6 4678411 - 3 0 9 8 /3 0 9 9 : 86 - 432 - 6 4671533 contact jilin sino - microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86 - 432 - 6 4678411 f ax 86 - 432 - 6 4665812 web site www.hwdz.com.cn market department add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86 - 432 - 6 4675588 6 4675688 6 4678411 - 3098/3099 fax: 8 6 - 432 - 6 4671533 r

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